致力于电子材料与器件设计相关领域，已经在APL, IEEE TED, IEEE EDL, ACS AMI, AM, Nat. Comm.等期刊发表SCI期刊论文120余篇，其中第一/通讯作者70余篇；做会议特邀报告5次；发表电子器件领域旗舰会议IEEE IEDM共6篇，含一作1篇；发表功率半导体器件与集成电路领域旗舰会议IEEE ISPSD共8篇，含通讯1篇；撰写Wiley英文专著1章节；谷歌学术h-index为36，引用4200余次。完整文章列表参考：
谷歌学术链接：https://scholar.google.com/citations?user=GqUdqyIAAAAJ&hl=en
ResearchGate链接：https://www.researchgate.net/profile/Zhaofu-Zhang-4/research
Web of Science链接：https://www.webofscience.com/wos/author/record/1990500
专著:
J. Robertson, Z. Zhang, Chapter: “Electronic Structure of Transparent Amorphous Oxide Semiconductors”, Chapter 3 in “Amorphous Oxide Semiconductors”, edited by H. Hosono, Wiley, West Sussex, UK (2022).
入职后期刊文章(#共同一作者; *通信作者):
[1] W. Yu, S. Cheng, Z. Li, L. Liu, Z. Zhang, Y. Zhao, S. Liu*, and Y. Guo*, The Application of Multi-scale Simulation in Advanced Electronic Packaging, Fundamental Research, (2024)
[2] E. Xu, Z. Xie, C. Cheng, X. He, W. Shen, G. Wu, K. Liang, Y. Guo, G. Ju, R. Cao*, and Z. Zhang*, Electronic Structures of metal/H-diamond (111) interfaces by Ab-initio Studies, J. Phys. D, 57, 365102 (2024)
[3] C. Cheng, X. Sun, Q. Gui, G. Wu, W. Shen, F. Dong*, Y. Liu, J. Robertson, Z. Zhang*, Y. Guo, and S. Liu*, Theoretical Insight into the Band Alignment at High-κ Oxide XO2/Diamond (X = Hf and Zr) Interfaces with a SiO2 Interlayer for MOS Devices, ACS Appl. Mater. Interfaces, 16, 25581 (2024)
[4] Q. Gui, W. Yu, C. Cheng, H. Guo, X. Zha, R. Cao, H. Zhong, J. Robertson, S. Liu, Z. Zhang*, Z. Jiang*, Y. Guo*, Origin of two-dimensional hole gas at the hydrogen-terminated diamond surfaces: Negative interface valence-induced upward band bending, J. Mater. Sci. Technol. 207, 76 (2024)
[5] C. Cheng, Z. Zhang, X. Sun, G. Wu, F. Dong, Y. Guo*, S. Liu*, Interface engineering of multilayer cubic boron nitride terminated diamond (111): Rational regulation of Au/diamond Schottky barriers for ambipolar applications, Diam. Relat. Mater. 142, 110779 (2024)
[6] Z. Sun#, Z. Qi#, K. Liang, X. Sun, Z. Zhang, L. Li, Q. Wang, G. Zhang, G. Wu*, W. Shen*, A neuroevolution potential for predicting the thermal conductivity of α, β, and ε-Ga2O3, Appl. Phys. Lett. 123, 192202 (2023)
[7] Q. Gui, W. Yu, C. Cheng, H. Guo, X. Zha, J. Robertson, S. Liu, Z. Zhang*, Y, Guo*, Theoretical Insights into the Interface Properties of Hydrogen-Terminated and Oxidized Silicon-Terminated Diamond Field-Effect Transistors With h-BeO Gate Dielectric, IEEE Trans. Electron Device, 70, 5550 (2023)
[8] (Editor’s pick)W. Yu, Q. Gui, Z. Zhang*, X. Wan, J. Robertson, Y. Guo*, High-Throughput Interface Screening and Modeling Scheme: The Case of β-Ga2O3/AlN Interfaces. Appl. Phys. Lett. 123, 161601 (2023)
[9] X. Wan#, Z. Li#, W. Yu, A. Wang, X. Ke, H. Guo, J. Su, L. Li, Q. Gui, S. Zhao, J. Robertson, Z. Zhang, and Y. Guo*, Machine Learning Paves the Way for High Entropy Compounds Exploration: Challenges, Progress, and Outlook, Adv. Mater. 2305192 (2023)
[10] Z. Fu, H. Guo, X. Wang, R. Cao, H. Zhong, S. Liu, J. Robertson, Y. Guo*, Z. Zhang*, Metal Contacts and Schottky Barrier Heights at Boron Arsenide Interfaces: A First-principles Study, J. Appl. Phys. 134, 115302 (2023)
[11] W. Yu, Z. Zhang*, J. Su, X. Wan, Q. Gui, H. Guo, J. Robertson, Y. Guo*, Machine-Learned Inter-Atomic Potentials for the phase change material Ge3Sb6Te5, Chem. Mater. 35, 6651 (2023)
[12] W. Yu, Z. Zhang*, Q. Gui, Y. Guo*, Active Learning the High-dimensional Transferable Hubbard U and V parameters in DFT+U+V Scheme, J. Chem. Theory Comput. 19, 6425 (2023)
[13] J. Jiang, M. Tian, W. Ji, Z. Hu, H. Li, Y. Guo, Z. Zhang*, X. Tang*, C. Hu*, W. Cao*, Mechanism of Threshold Voltage Instability in SiC MOSFETs and Impacts on Dynamic Switching, ISPSD, 318 (2023)
[14] J. Su, Z. Zhang*, X. Wan, W. Yu, A. Wang, H. Zhong, J. Robertson, Y. Guo*, Theoretical predictions of the structural stability and property contrast for Sb-rich Ge3Sb6Te5 phase-change materials, Appl. Phys. Lett. 122, 252102 (2023)
[15] (Editor’s Pick) J. Chen, Z. Zhang, Y. Guo, and J. Robertson*, Revisiting the electronic and optical properties of SiO2 polymorphs by hybrid functional calculations, J. Appl. Phys. 133, 044101 (2023)
[16] Q. Gui, Z. Wang, C. Cheng, X. Zha, J. Robertson, S. Liu, Z. Zhang*, Y. Guo*, Theoretical study of the interface engineering for H-diamond field effect transistors with h-BN gate dielectric and graphite gate, Appl. Phys. Lett. 121, 211601 (2022)
[17] Y. Yin, Z. Zhang*, C. Shao, J. Robertson, Y. Guo*, Computational Study of Transition Metal Dichalcogenide Cold Source MOSFETs with Sub-60 mV per decade and Negative Differential Resistance Effect, NPJ 2D Mater. Appl. 6, 55 (2022)
[18] X. Wan#, Z. Zhang#, W. Yu, H. Niu, X. Wang, Y. Guo*, Machine-Learning-Assisted Discovery of Highly Efficient High Entropy Alloy Catalysts for the Oxygen Reduction Reaction, Patterns 3, 100553 (2022)
[19] J. Chen, Z. Zhang*, Y. Guo, J. Robertson, Metal Contacts with Moire interfaces on WSe2 for Ambipolar Applications, Appl. Phys. Lett. 121, 051602 (2022)
[20] R. Cheng, L. Yin, Y. Wen, B. Zhai, Y. Guo, Z. Zhang, W. Liao, W. Xiong, H. Wang, S. Yuan, J. Jiang, C. Liu, and J. He, Ultrathin ferrite nanosheets for room-temperature two-dimensional magnetic semiconductors, Nat. Comm. 13, 5241 (2022)
入职前部分文章:
[1] Z. Zhang, Y. Guo, and J. Robertson*, Reduced Fermi Level Pinning using Physisorptive Moire-MoS2/Metal Schottky Barriers, ACS Appl. Mater. Interface 14, 11903 (2022)
[2] Z. Zhang, Y. Guo, and J. Robertson*, p-Type Semiconduction in Oxides with Cation Lone Pairs, Chem. Mater. 34, 643 (2022)
[3] Z. Zhang, Z. Wang, Y. Guo, and J. Robertson*, Carbon Cluster Formation and Mobility Degradation in 4H-SiC MOSFETs, Appl. Phys. Lett. 118, 031601 (2021)
[4] Z. Zhang, Y. Guo, and J. Robertson*, Termination-dependence of Fermi level pinning at rare-earth arsenide/GaAs interfaces, Appl. Phys. Lett. 112, 251602 (2020)
[5] Z. Zhang, Y. Guo, H. Lu, S. Clark, and J. Robertson*, Hybrid band offset calculation for heterojunction interfaces between disparate semiconductors, Appl. Phys. Lett. 116, 131602 (2020)
[6] Z. Zhang, Y. Guo and J. Robertson*, Chemical bonding and band alignment at X2O3/GaN (X = Al, Sc) interfaces, Appl. Phys. Lett. 114, 161601 (2019)
[7] Z. Zhang, Q. Qian, B. Li, and K. J. Chen*, Interface Engineering of Monolayer MoS2/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation Treatment, ACS Appl. Mater. Interfaces 10, 17419 (2018)
[8] Z. Zhang, R. Cao, C. Wang, H. Li, H. Dong, W. Wang, F. Lu, Y. Cheng, X. Xie, H. Liu, K. Cho, R. Wallace, and W. Wang*, GaN as an Interfacial Passivation Layer: Tuning Band Offset and Removing Fermi Level Pinning for III-V MOS Devices, ACS Appl. Mater. Interfaces 7(9), 5141 (2015)
[9] Z. Zhang, Y. Guo, and J. Robertson*, Electronic structure of amorphous copper iodide: A p-type transparent semiconductor, Phys. Rev. Mater. 4, 054603 (2020)
[10] Z. Zhang, Y. Guo, and J. Robertson*, Origin of Weaker Fermi Level Pinning and Localized Interface States at Metal Silicide Schottky Barriers, J. Phys. Chem. C 124, 19692 (2020)
[11] Z. Zhang, B. Li, Q. Qian, X. Tang, M. Hua, B. Huang, and K. J. Chen*, Revealing the Nitridation Effects on GaN Surface by First-Principles Calculation and X-Ray/Ultraviolet Photoemission Spectroscopy, IEEE Trans. Electron Devices 64(10), 4036 (2017)
[12] Z. Zhang#,*, B. Huang#, Q. Qian, Z. Gao, X. Tang, and B. Li*, Strain-tunable III-Nitride/ZnO heterostructures for photocatalytic water-splitting: A hybrid functional calculation, APL Mater. 8, 041114 (2020)
[13] Z. Zhang, M. Hua, J. He, G. Tang, Q. Qian, and K. J. Chen*, Ab-initio Study of the Impact of Nitridation at Amorphous-SiNx/GaN Interface, Appl. Phys. Express 11, 081003 (2018)
[14] Z. Zhang, Y. Guo, and J. Robertson*, Phase dependence of Schottky barrier heights for Ge-Sb-Te and related phase change materials, J. Appl. Phys. 127, 155301 (2020)
[15] Z. Zhang, Y. Guo, and J. Robertson*, Role of the third metal oxide in In–Ga–Zn–O4 amorphous oxide semiconductors: Alternatives to gallium, J. Appl. Phys. 128, 215704 (2020)
[16] Y. Liao#, Z. Zhang#,*, Z. Gao, Q. Qian, and M. Hua*, Tunable properties of novel Ga2O3 monolayer for electronics and optoelectronics applications, ACS Appl. Mater. Interfaces 12, 30659 (2020)
[17] (封底文章) J. Zhao#*, X. Huang#, Y. Yin#, Y. Liao, H. Mo, Q. Qian, Y. Guo, X. Chen, Z. Zhang*, and M. Hua*, Two-Dimensional Gallium Oxide Monolayer for Gas Sensing Application, J. Phys. Chem. Lett. 12, 5813 (2021)
[18] (封面文章) X. Wan, Z. Zhang*, W. Yu, and Y. Guo*, A density-functional-theory-based and machine-learning-accelerated hybrid method for intricate system catalysis, Materials Reports: Energy 3, 100046 (2021)
[19] Z. Wang#, Z. Zhang#, S. Liu, C. Shao, J. Robertson, Y. Guo, Impact of Carbon-Carbon Defects at the SiO2/4H-SiC (0001) Interface: A First-Principles Calculation J. Phys. D: Appl. Phys. 55, 025109 (2021)
[20] Z. Wang#, Z. Zhang#, S. Liu, J. Robertson, and Y. Guo*, Electronic properties and tunability of the hexagonal SiGe alloys, Appl. Phys. Lett. 118, 172101 (2021)
[21] (热点文章) H. Guo#, Z. Zhang#, B. Huang, X. Wang, H. Niu, Y. Guo, B. Li, R. Zheng, and H. Wu*, Theoretical study on the photocatalytic properties of 2D InX(X=S, Se)/transition metal disulfide (MoS2 and WS2) van der Waals heterostructures, Nanoscale 12, 20025 (2020)
[22] J. Chen, Z. Zhang*, Y. Guo, J. Robertson, Electronic properties of CaF2 bulk and interfaces, J. Appl. Phys. 131, 215302 (2022)
[23] J. Chen, Z. Zhang*, Y. Guo and J. Robertson, Schottky Barrier Heights of Defect-free Metal/ZnO, CdO, MgO and SrO Interfaces, J. Appl. Phys. 118, 172101 (2021)
[24] Q. Zhou#, Z. Zhang#, H. Li, S. Golovynskyi, X. Tang, H. Wu, J. Wang, and B. Li*, Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center, APL Mater. 8, 081107 (2020)
[25] Z. Wang#, Z. Zhang#, C. Shao, J. Robertson, S. Liu*, and Y. Guo*, Tuning the high-κ oxide (HfO2, ZrO2)/4H-SiC interface properties with a SiO2 interlayer for power device applications, Appl. Surf. Sci. 527, 146843 (2020)
[26] H. Guo#, Z. Zhang#,*, Y. Guo, Z. Gao, R. Zheng, and H. Wu*, Impact of the interface vacancy on Schottky barrier height for Au/AlN polar interfaces, Appl. Surf. Sci. 505, 144650 (2020)
[27] (ESI高被引文章)H. Niu, Z. Zhang*, X. Wang, X. Wan, C. Shao, and Y. Guo*, Theoretical Insights into the Mechanism of Selective Nitrate-to-Ammonia Electroreduction on Single-Atom Catalyst, Adv. Funct. Mater. 31, 2008533 (2021)
[28] (ESI高被引文章)H. Niu#, X. Wan#, X. Wang, C. Shao, J. Robertson, Z. Zhang*, and Y. Guo*, Single-Atom Rhodium on Defective g-C3N4: A Promising Bifunctional Oxygen Electrocatalyst, ACS Sustainable Chem. Eng. 9, 3590, (2021)
[29] (ESI高被引文章)H. Niu, X. Wang, C. Shao, Z. Zhang*, and Y. Guo*, Computational Screening Single-Atom Catalysts Supported on g-CN for N2 Reduction: High Activity and Selectivity, ACS Sustainable Chem. Eng. 8, 13749 (2020)
科研项目经历
[1] 湖北省科技创新团队，2023-2025，参与。
[2] 国家自然科学基金青年科学基金项目，2024-2026，主持。
[3] 武汉市知识创新专项曙光计划项目，2023-2025，主持。
[4] betway必威自主科研项目， 2023-2024，主持。
[5] 广东省基础与应用基础研究基金省市联合基金项目，2022-2025，主持。
[6] betway必威人才科研启动经费，主持。
学术会议
[1] (邀请报告)张召富，超宽禁带半导体界面工程理性设计，第十八届全国MOCVD学术会议，恩施，中国 (2024)
[2] (邀请报告)张召富，宽禁带半导体界面工程及其应用，第一届应用物理会议，溧阳，中国 (2024)
[3] (邀请报告)张召富，高通量方法辅助筛选和预测氧化镓半导体界面结构，第四届海峡两岸氧化镓及其相关材料与器件研讨会，济南，中国 (2023)
[4] (邀请报告) Z. Zhang et al. Revealing the Mobility Degradation Mechanism in 4H-SiC MOSFETs by First-principles Calculations, 第十届IEEE下一代电子国际学术会议（ISNE2022）, 无锡, 中国 (2022)
[5] (邀请报告) Z. Zhang et al. P-type oxides for Back-end-of-line Semiconductor Devices, 第29届非晶和纳米晶半导体国际会议（ICANS29）, 南京, 中国 (2022)
[6] Z. Zhang, et al. Nitridation of GaN Surface for Power Device Application: A First-Principles Study, In 2016 Int. Electron Device Meeting (IEDM 2016), pp. 906-909, Dec., 2016（电子器件领域最顶尖国际学术会议）
